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L6569AD013TR

ST L6569AD013TR

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ST

HaBr MOSvIGBTDr 600V SO-8 SMD
Supplier: STMicroelectronics
Matchcode: L6569AD013TR
Rutronik No.: ICIFP43802
Unit Pack: 2500
MOQ: 2500
package: SO-8
Packaging: REEL
In Stock
Obsolete Part
Supplier Last Time Buy: 09/18/2020
0.8807 $
2,201.75 $

HaBr MOSvIGBTDr 600V SO-8 SMD Description

High Voltage Half Bridge Driver with oscillator and Integrated Bootstrap Diode

The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.

The output drivers are designed to drive external n-channel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25ms] to avoid crossconduction of the power devices.
Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.


Key Features

  • dV/dt IMMUNITY UP TO ±50V/ns
  • DEAD TIME 1.25µs
  • ESD PROTECTION
  • UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
  • VERY LOW START UP CURRENT: 150mA
  • HIGH VOLTAGE RAIL UP TO 600V
  • INTERNAL BOOTSTRAP DIODE STRUCTURE
  • BCD OFF LINE TECHNOLOGY
  • DRIVER CURRENT CAPABILITY:SINK CURRENT = 270mASOURCE CURRENT = 170mA
  • PROGRAMMABLE OSCILLATOR FREQUENCY
  • 15.6V ZENER CLAMP ON VS


Parameter

V(op,min)
18 V
V(op,max)
618 V
Mounting
150
t(on)
NAN µS
t(off)
N µS
Technology
N
Automotive
NO
Package
SO-8
Leadfree Defin.
10
Packaging
REEL
ECCN
EAR99
Customs Tariff No.
85423990000
Country
China
ABC-Code
B
Supplier Lead time
14 weeks
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