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HSS/LSS DRV 600V 2A SO-8 SMD
Rutronik No.: ICGDRV1236
Unit Pack: 2500
HSS/LSS DRV 600V 2A SO-8 SMD Description
High voltage high and low-side 2 A gate Driver
The L6498 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing control units such as microcontrollers or DSP.
Both device outputs can sink 2.5 A and source 2 A, making the L6498 particularly suited for medium and high capacity power MOSFETs\IGBTs.
The outputs cannot be simultaneously driven high thanks to an integrated interlocking function.
The independent UVLO protection circuits present on both the lower and upper driving sections prevent the power switches from being operated in low efficiency or dangerous conditions.
The integrated bootstrap diode as well as all of the integrated features of this driver make the application PCB design simpler and more compact, and help to reduce the overall bill of material.
- Transient withstand voltage 600 V
- dV/dt immunity ± 50 V/ns in full temperature range
- Driver current capability:
- 2 A source typ. at 25 °C
- 2.5 A sink typ. at 25 °C
- Short propagation delay: 85 ns
- Switching times 25 ns rise/fall with 1 nF load
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Integrated bootstrap diode
- Interlocking function
- UVLO on both high-side and low-side sections
- Compact and simplified layout
- Bill of material reduction
- Flexible, easy and fast design
- 10 V
- 20 V
- -40 °C
- 125 °C
- 0.085 µS
- 0.085 µS
- Leadfree Defin.
- Customs Tariff No.
- Supplier Lead time
- 18 weeks