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HaBr MOSvIGBTDr 600V SO-8 SMD
Rutronik No.: ICIFP44456
Unit Pack: 100
HaBr MOSvIGBTDr 600V SO-8 SMD Description
HV high and low side driver with embedded bootstrap diode
The L6384E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to single input configuration. Further prevention from outputs cross conduction is guaranteed by the deadtime function, tunable by the user through an external resistor connected to the DT/SD pin.
The L6384E device has one input pin, one enable
pin (DT/SD) and two output pins, and guarantees matched delays between
low-side and high-side sections, thus simplifying device's high
frequency operation. The logic inputs are CMOS/TTL compatible to ease
the interfacing with controlling devices. The bootstrap diode is
integrated inside the device, allowing a more compact and reliable
The L6384E features the UVLO protection and a voltage clamp on the VCCsupply voltage. The voltage clamp is typically around 15.6 V and is useful in order to ensure a correct device functioning in cases where VCCsupply voltage is ramped up too slowly or is subject to voltage drops.
The device is available in a DIP-8 tube and SO-8 tube and tape and reel packaging options.
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/nsec in full temperature range
- Driver current capability
- 400 mA source
- 650 mA sink
- Switching times 50/30 nsec rise/fall with 1 nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Shutdown input
- Deadtime setting
- Undervoltage lockout
- Integrated bootstrap diode
- Clamping on VCC
- Available in DIP-8/SO-8 packages
- 14.6 V
- 600 V
- NAN µS
- N µS
- Leadfree Defin.
- Customs Tariff No.
- Supplier Lead time
- 14 weeks