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IDH16S60C

INFINEON

SiC-D. 600V 16A 1.70V TO220-2
Supplier: Infineon Technologies
Matchcode: IDH16S60C
Rutronik No.: DSKYP5244
Unit Pack: 50
MOQ: 50
package: TO220-2
Packaging: TUBE
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In Stock
5.97 $
298.50 $

Prices

50 5.97 $
100 5.82 $
250 5.67 $

SiC-D. 600V 16A 1.70V TO220-2 Description

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V f values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design concept consisting in regularly distributed p-doped areas, in conjunction with the pure Schottky ones: the so-called “merged pn-structure” (MPS).

Summary of Features

  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)

Benefits

  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI

Target Applications

  • Server
  • Telecom
  • Solar
  • UPS
  • PC Power
  • Motor Drives
  • Lighting

Parameter

Configuration
SINGLE
V(RRM)
600 V
I(F)per diode
16 A
Package
TO220-2
Automotive
NO
Technology
SiC
V(F)
1.7 V
I(FSM)
23 A
Packaging
TUBE
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP000797666
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
A
Supplier Leadtime
10 weeks
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