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IDH12G65C6 NPI

INFINEON

SiC-Diode 12A 650V 1,25V TO220
Supplier: Infineon Technologies
Matchcode: IDH12G65C6 NPI
Rutronik No.: DSKY5013
Unit Pack: 1
MOQ: 1
package: TO220-2
Packaging: INDIVIDUAL
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In Stock
7.24 $
7.24 $

SiC-Diode 12A 650V 1,25V TO220 Description

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).

Summary of Features

  • The lowest V F: 1.25V
  • Best-in-class figure of merit (Q c x V F)
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High dv/dt ruggedness
  • Optimized thermal behavior

Benefits

  • Improved system efficiency over all load conditions
  • Increased system power density
  • Reduced cooling requirements and increased system reliability
  • Enables extremely fast switching
  • Easy and effective match with CoolMOS™ 7 families
  • Optimal price performance

Target Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Lighting

Parameter

V(RRM)
650 V
Configuration
SINGLE
I(F)per diode
12 A
V(F)
1.25 V
Mounting
THT
Technology
CoolSiC G6
T(j) max
175 °C
I(FSM)
64 A
Automotive
NO
Package
TO220-2
Leadfree Defin.
RoHS-conform
Packaging
INDIVIDUAL
Supplier Part
SP001595596
Customs Tariff No.
85411000000
Country
Malaysia
Supplier Lead time
14 weeks
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