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IDH10S60C

INFINEON

S-Diode 600V 10A 2.10V TO220-2
Supplier: Infineon Technologies
Matchcode: IDH10S60C
Rutronik No.: DSKYP5252
Unit Pack: 500
MOQ: 500
package: TO220-2
Packaging: TUBE
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On request
3.52 $
1,760.00 $
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S-Diode 600V 10A 2.10V TO220-2 Description

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V f values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design concept consisting in regularly distributed p-doped areas, in conjunction with the pure Schottky ones: the so-called “merged pn-structure” (MPS).

Summary of Features

  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)

Benefits

  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI

Target Applications

  • Server
  • Telecom
  • Solar
  • UPS
  • PC Power
  • Motor Drives
  • Lighting

Parameter

Configuration
SINGLE
V(RRM)
600 V
I(F)per diode
10 A
Package
TO220-2
Automotive
NO
Technology
SiC
V(F)
2.1 V
I(FSM)
51 A
Packaging
TUBE
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP000657996
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Malaysia
ABC-Code
A
Supplier Leadtime
10 weeks
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