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IDD04SG60C

INFINEON SP000786804

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INFINEON

S-Diode 600V 4A 2.30V TO252-3
Supplier: Infineon Technologies
Matchcode: IDD04SG60C
Rutronik No.: DSKYP5160
Unit Pack: 1
MOQ: 1
package: TO252
Packaging: REEL
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In Stock
1.11 $
1.11 $

S-Diode 600V 4A 2.30V TO252-3 Description

The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The Generation 3 is based on the same technology platform as Generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)

Benefits

  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI

Target Applications

  • Server
  • Telecom
  • Solar
  • Lighting
  • PC Power
  • AC-DC

Parameter

Configuration
SINGLE
V(RRM)
600 V
I(F)per diode
4 A
Package
TO252
Automotive
NO
Technology
SiC
V(F)
2.3 V
I(FSM)
18 A
Packaging
REEL
Mounting
SMT
Leadfree Defin.
RoHS-conform
Supplier Part
SP000786804
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Taiwan
Supplier Leadtime
10 weeks
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