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IDB10S60C

INFINEON SP000411540

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INFINEON

SIC-Diode 600V 10A 1.70V TO263
Supplier: Infineon Technologies
Matchcode: IDB10S60C
Rutronik No.: DSKYP4955
Unit Pack: 1000
MOQ: 1000
package: TO263
Packaging: REEL
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On request
3.40 $
3,400.00 $
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SIC-Diode 600V 10A 1.70V TO263 Description

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V f values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design concept consisting in regularly distributed p-doped areas, in conjunction with the pure Schottky ones: the so-called “merged pn-structure” (MPS).

Summary of Features

  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)

Benefits

  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI

Target Applications

  • Server
  • Telecom
  • Solar
  • UPS
  • PC Power
  • Motor Drives
  • Lighting

Parameter

Configuration
SINGLE
V(RRM)
600 V
I(F)per diode
10 A
Package
TO263
Automotive
NO
Technology
2nd thinQ!
V(F)
1.7 V
I(FSM)
76 A
Packaging
REEL
Mounting
THT
Leadfree Defin.
RoHS-conform
Supplier Part
SP000411540
ECCN
EAR99
Customs Tariff No.
85411000000
Country
Taiwan
ABC-Code
C
Supplier Leadtime
10 weeks
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